·  Diploma (Nuclear Physics), Univ. of Basel, Switzerland, 1967

·  Ph.D. (Solid State and Applied Physics) Univ. of Basel, Switzerland, 1970


·  Associate Professor, 1980-82; Professor, 1982 to date, Dept. of Mat. Sci. and Eng., Univ. of California at Berkeley

·  Program Leader, Electronic Materials Program, Center for Advanced Materials,
    Materials Sciences Division, Lawrence Berkeley National Laboratory, 1984 to date

·  Faculty Senior Scientist, Lawrence Berkeley National Laboratory, Univ. of Calif., 1980 to date

·  Visiting Professor at the Imperial College of Science, Technology & Medicine, London, 1991

·  Alexander von Humboldt U.S. Senior Scientist at the Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany, 1986

·  Staff/Senior Staff Scientist, Lawrence Berkeley National Laboratory, Univ. of Calif., 1973-1980


·                                  Semiconductor nanocrystals: Mechanical, optical and electrical properties of ion beam generated Ge and Ge-Sn nanocrystals embedded in silica;

·                                  Semiconductor crystal growth: Liquid phase homo-epitaxy of ultra-pure GaAs on semi insulating and doped GaAs; Liquid phase homo-epitaxy of ultra-pure and doped Ge; Czochralski growth of ultra-pure and doped Ge crystal of natural and isotopically controlled composition;

·                                  Semiconductor characterization and processing: Electrical (variable temperature Hall effect and resistivity), Deep level transient spectroscopy (DLTS)), optical (far infrared spectroscopy with Fourier transform spectrometers, mid- and near-infrared, visible and ultraviolet grating spectrometers, photoluminescence) and ion beam characterization (Rutherford backscattering spectrometry RBS) of dopants, impurities, native defects and complexes in a number of semiconductor systems;

·                                  Far infrared lasers and detector; low temperature thermal sensors: Research and development of semiconductor hole population inversion THz lasers and low background far infrared photoconductors and pyroelectric detectors for astrophysical, astronomical and cosmological applications; neutron transmutation doped Ge thermistors and thermistor arrays operating down to 10 milli Kelvin;

·                                  Isotopically controlled semiconductors: Studies of a broad range of properties and effects which are influenced by the isotopic composition of semiconductors. Research includes local vibrational mode (LVM) spectroscopy of impurities, phonons, thermal conductivity, self- and impurity diffusion in Si, Ge, GaAs, AlGaAs, GaP and GaSb.  Nuclear and electron spin resonance studies for Quantum Computation applications.


·  Member National Academy of Engineering, 2010

·  Recipient John Bardeen Award of the TMS, 2010

·  Holder of the Liao-Cho Innovation Endowed Chair at UC Berkeley, 2005

·  Recipient David Turnbull Lectureship Award of the Materials Research Society, 2005

·  Fellow, American Association for the Advancement of Science, 2004

·  Distinguished Professor at Keio University, Japan, 2004

·  Recipient James C. McGroddy Prize for New Materials of the American Physical Society, 1999

·  Recipient Max-Planck Research Award, 1994

·  Research Professor, Miller Foundation for Basic Research in Science, 1990 and 2001

·  Fellow, American Physical Society, 1986

·  U.S. Senior Scientist Award of the Alexander von Humboldt Foundation, 1986


·       Member Advisory Board of the Paul Drude Institute, Berlin, 2000 to date

·       Chairman, 20th Intl. Conf. on Defects in Semiconductors (20th ICDS), Berkeley, CA 1999

·       Member Executive Committee of the Electronic Materials Symposium, 1994-1996

·       Co-chairman, 6th Intl. Conf. on Shallow Level Centers in Semicond., Berkeley, CA 1994

·       Member, Editorial Advisory Board of the Journal of Physics and Chemistry of Solids, 1993 to date, for Materials Science Foundation, Trans Tech Publications, 1997 to date and for Reviews, Journal of Applied Physics, 3/99 to date

·       Member Intl. Assessment Team for the SAFIRE far IR Detectors, NASA Langley, 1991

·       Chairman, Workshop on "Semiconductor Thermistors for milliKelvin Operation" sponsored by the NSF Center for Particle Astrophysics, Berkeley, CA, 1991

·       Review Committee Member, Brookhaven National Laboratory Instrum. Division, 1987 - 1993

·       Member of the US DOE Panel on "Hydrogen Interactions in Materials," La Jolla CA, 1990

·       Co-chairman, Materials Research Society Symp. on "Defects, Impurities and Diffusion: Bulk and Layered Structures," Fall Meeting 1989

·       Member Japanese Techn. Panel on Sensors, U.S. Nat. Acad. of Science and NSF, 1988

·       Co-chairman, 1st Intl. Conf. Spectr. of Shallow Centers in Semic., Berkeley, CA 1984

·       Co-chairman, Materials Research Society Symp. on "Radiation Detector Materials," 1982


·       U.S. Patent 4,589,006, "Germanium Detector Passivated with Hydrogenated Amorphous Germanium," issued May 13, 1986

·       U.S. Patent 5,110,679, "Hard Carbon Nitride and a Method of Preparing Same," issued May 5, 1992

·       U.S. Patent 6,011,810, "Doping of Germanium and Silicon Crystals with Non-Hydrogenic Acceptors for Far Infrared Lasers," issued January 4, 2000







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