Assistant Professor, Materials Science and Engineering
Faculty Scientist at Lawrence Berkeley National Laboratory
375 Hearst Memorial Mining Building
Berkeley, CA 94720-1760
Phone: (510) 664-5211
Research Website: albalushi.berkeley.edu
The Al Balushi Research Group focuses on electronic materials synthesis of compound semiconductor thin films and nanostructures using chemical vapor deposition. In particular, our group is interested in creating novel scalable crystal growth and integration schemes of emerging materials for logic, optoelectronic and power devices. Discoveries relating to viable quantum technologies are also derived from new materials developed in the Al Balushi Research Group. Current and prior topics researched by principle investigator include nanowire growth and integration; the development of group-III nitride semiconductors for deep-green LEDs, ultra-wide bandgap semiconductors, in situ characterization of growth stress during film growth; integration of compound semiconductor thin films with two-dimensional and layered materials for optoelectronics; the development of new valleytronic materials; growth and characterization of two-dimensional transition-metal dichalcogenide monolayers and heterostructures; growth of epitaxial graphene, intercalation and crystallization at confined interfaces; and phase transformation & optoelectronic modulation in transition-metal dichalcogenide crystals. The Al Balushi Research Group also has efforts in advancing synthesis capabilities for nanomaterials, particularly highly anisotropic low-dimensional systems, such as anisotropic 2D and layered materials and their van der Waals heterostructures. The distinguishing strengths of our research group are: the development of wafer-scale materials synthesis, doping and integration approaches for thin films and low-dimensional materials using scalable growth techniques, specifically chemical vapor deposition. In addition, advancing the capabilities of in situ growth platforms as well as in situ monitoring instrumentation that will ultimately aid in the discovery of new materials, their structures and opto-electronic properties for emerging devices.