Advanced Electron Microscopy Reveals Short Range Ordering Motifs in Semiconductors

In a recent paper published in Science, Prof. Minor’s group used energy-filtered scanning nano electron diffraction (4D-STEM) to uniquely identify short range ordering motifs in GeSiSn. This publication represents the first direct evidence of SRO in a semiconductor material, an exciting new area for exploration in the field of microelectronics.

Read the full article here.